dated : 07/12/2002 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? LL103A...ll103c silicon schottky barrier diodes for general purpose applications the LL103A, b, c is a metal on silicon schottky barrier device which is prot ected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices, st eering, biasing and coupling diodes for fast switching and low logic level applications. other uses are for click suppr ession, efficient full wave bridges in telephone subsets, and as blocking diodes in rechargeable low voltage battery systems. this diode is also available in do-35 case with type designation sd103a, b, c. absolute maximum ratings (t a = 25 o c) symbol value unit peak reverse voltage LL103A ll103b ll103c v rrm v rrm v rrm 40 30 20 v v v power dissipation (infinite heatsink) tc = 3/8 from body derates at 4 mw/ o c to 0 at 125 o c p tot 400 1) mw single cycle surge 60hz sinewave i fsm 15 a junction temperature t j 125 o c storage temperature range t s -55 to +175 o c 1) valid provided that electrodes ar e kept at ambient temperature.
dated : 07/12/2002 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? LL103A...ll103c characteristics at t amb = 25 o c symbol min. typ. max. unit forward voltage at i f = 20ma at i f = 200ma v f v f - - - - 0.37 0.6 v v leakage current at v r = 30v at v r = 20v at v r =10v LL103A ll103b ll103c i r i r i r - - - - - - 5 5 5 ua ua ua junction capacitance at v r = 0v, f = 1mhz c tot - 50 - pf reverse recovery time at i f = i r = 5ma to 200 ma , recover to 0.1 i r t rr - 10 - ns
dated : 07/12/2002 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? 0 10 20 1 t p typical non repetitive forward surge current versus pulse width rectangular pulse i f 40 30 50 a ll103 typical variation of reverse current at various temperatures 0 -1 10 1 v r 30 50v a i r 2 10 10 10 3 ll103 typical variation of fwd. current vs.fwd.voltage for primary conduction through the schottky barrier -2 10 0 -1 10 1 v f 0.5 1v ma i f 2 10 10 10 3 ll103 0 00.5 1 2 1.5v 1 v f typical high current forward conduction curve tp=300 s, duty cycle=2% i f 4 3 5 a ll103 -3 10 10 -2 -1 10 10 2 10 3 10 ms 10 20 40 tamb=125 c o o 100 c 75 c o o 50 c o 25 c LL103A...ll103c
dated : 07/12/2002 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? blocking voltage deration versus temperature at various average forward currents ll103 0 100 200 c t amb v r typical capacitance versus reverse voltage pf c tot 100 40 0 10 20 30 50 v o 100 ma 200 ma i f =400 ma 10 020 50v 40 30 v r 7 5 4 3 2 10 2 3 5 4 7 1 ll103 LL103A...ll103c
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